Mn掺杂ZnO材料的室温铁磁性研究进展  

Research Advances of Room-temperature Ferromagnetic Mn-doped ZnO Composite

作　　者：胡永刚[1] 胡作启[1] 陈飞[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《磁性材料及器件》2007年第1期19-22,共4页Journal of Magnetic Materials and Devices

基　　金：湖北省自然科学专项科研基金资助项目(2004ABA105)

摘　　要：具有室温铁磁性的稀磁半导体是自旋电子学应用的基础。Mn掺杂ZnO是制备室温铁磁性半导体的一种有希望的材料。本文综述了Mn掺杂ZnO材料的室温铁磁性研究进展,并从理论和实验上说明了Mn在ZnO中有较高的溶解度;单相的Zn1-xMnxO缺乏铁磁性,通过共掺或缺陷,能产生较多的空穴,更有利于产生室温铁磁性。Diluted magnetic semiconductor with room-temperature ferromagnetism is the basement for spintronics applications. Mn-doped ZnO is a hopeful material to fabricate room-temperature ferromagnetic semiconductors.This paper reviews the advancement of room-temperature ferromagnetism in the materials of Mn-doped ZnO, It has been illuminated from the theories and experiments that Mn has a relatively high solubility in ZnO, but ferromagnetism is absent for single phase Zn1-xMnxO, and a lot of holes can be produced by co-doping or defects, which are favourable to resulting room-temperature ferromagnetism.

关 键 词：自旋电子学 稀磁半导体 ZNO 室温铁磁性 

分 类 号：O482.523[理学—固体物理]