半导体硅的Seebeck系数和电阻率测量  

SEEBECK COEFFICIENT AND ELECTRICAL RESISTIVITY OF SILICON

作　　者：赵伟[1] 侯清润[1] 陈宜保[1] 何元金[1] 

机构地区：[1]清华大学物理系,北京100084

出　　处：《物理与工程》2007年第1期26-30,共5页Physics and Engineering

摘　　要：本文介绍了半导体硅的Seebeck系数和电阻率的测量,与Hall系数和电阻率测量实验相对应,从另一个方面了解半导体导电性能的一些特征.由Seebeck系数的正负号确定载流子的类型是P型还是N型.半导体内有两种导电机制:杂质导电和本征导电.在杂质导电区,可以确定晶格散射因子;在本征导电区,可以确定硅的禁带宽度.The experimental method and results of measuring the Seebeck coefficient and electric resistivity of semiconductor silicon are introduced. Similar to the measurement of Hall coefficient, some conduction properties of silicon could be understood from Seebeck coefficient in another perspective. The charged carriers could be distinguished to be P-type or N-type according to the sign of the Seebeck coefficient. Two conduction mechanisms, impurity conduction and intrinsic conduction, are found in semiconductor. The lattice scattering factor in the impurity conduction region and the forbidden band width of silicon in intrinsic conduction region could be determined.

关 键 词：半导体硅 SEEBECK系数 电阻率 

分 类 号：O472[理学—半导体物理]