掺溴非晶碳梯度薄膜的制备与分析  

Preparation and XPS study of gradient bromating amorphous hydrogenated carbon film

作　　者：马兆侠[1] 吴卫东[1] 冯建鸿[1] 程新路[2] 唐永建[1] 杨向东[2] 

机构地区：[1]中国工程物理研究院激光聚变研究中心,四川绵阳621900 [2]四川大学原子分子物理研究所,成都610065

出　　处：《强激光与粒子束》2007年第1期83-85,共3页High Power Laser and Particle Beams

基　　金：中国工程物理研究院基金资助课题(20040215);高温高密度等离子体物理国家重点实验室基金资助课题(51480030103ZW0802)

摘　　要：采用低压等离子增强化学气相沉积法用溴乙烷、氢气制备了掺溴的非晶碳梯度薄膜。通过样品的XPS能谱分析研究了薄膜沉积速率与氢气流量、溴元素原子分数与溴乙烷流量以及溴元素原子分数与刻蚀时间之间的关系,得出了溴乙烷流量、刻蚀时间对薄膜的主要键态含量、C元素sp2/sp3键态杂化比和薄膜硬度的影响。结果表明:薄膜沉积速率随氢气流量的增加而线性减小,溴元素含量随溴乙烷流量的增加先增加后降低,刻蚀时间越长,溴乙烷流量越小,薄膜越硬。The gradient bromating amorphous hydrogenated carbon films were prepared by low-pressure plasma chemical vapor deposition （LPPCVD） method using the mixture of bromoethane and hydrogen as source gas. The relationships of the film deposition rate and the hydrogen, and that of the bromine content and the bromioethane flowrate were described. The influences of the etching time and bromine flowrate on the main bounding state of the film CH C-Csp^2 and C-Csp^3 were analyzed. The results show that the deposition speed of the thin film decreases linearly with the increment of the hydrogen flowrate. Bromine content increases at first and then reduces with inreasment of the bromoethane flowrate. The longer the etch time and the lower the bromoethane flowrate are, the harder the prapared thin film is.

关 键 词：低压等离子体 化学气相沉积 掺溴梯度薄膜 XPS能谱 非晶碳 

分 类 号：O646[理学—物理化学]