稀磁半导体Zn_（1－x）Mn_xSe外延薄膜与超晶格的光学特性研究  

Optical Studies on Epitaxy Films and Superlattices of Diluted Magnetic Semiconductor Zn_(1-x)Mn_xSe

作　　者：陈晞[1] 王学忠[1] 刘继周 陈辰嘉[1] 王杰[1] 凌震 王迅[1] 王淑梅[1] 吕少哲 

机构地区：[1]北京大学物理系,复旦大学应用表面物理国家重点实验室,中国科学院长春物理研究所激发态物理开放实验室

出　　处：《Journal of Semiconductors》1996年第8期573-577,共5页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：用分子束外延生长了不同组分ｘ的Ｚｎ１－ｘＭｎｘＳｅ外延膜和Ｚｎ１－ｘＭｎｘＳｅ／ＺｎＳｅ超晶格．由于Ｚｎ１－ｘＭｎｘＳｅ的能隙Ｅｇ随组分变化在低组分区形成弓形，且弓形的范围随温度变化的反常特性，首次在光致发光谱（ＰＬ）中观测到当温度升高时，Ｚｎ１－ｘＭｎｘＳｅ／Ｚｎｓｅ超晶格中由ＺｎＳｅ为阱、Ｚｎ１－ｘＳｅ为垒转换成Ｚｎ１－ｘＳｅ为阱，ＺｎＳｅ为垒．瞬态光致发光结果表明，Ｚｎ１－ｘＭｎｘＳｅ／ＺｎＳｅ超晶格中Ｍｎ＋＋离子的激发态弛豫时间远大于Ｚｎ１＝ｘＭｎｘＳｅ外延模中Ｍｎ＋＋离子的弛豫时间，这可能是由于超晶格中界面效应引起Ｍｎ＋＋离子间交换相互作用改变所致．Abstract Zn1-xMnxSe films and Zn1-xMnxSe/ZnSe superlattices with different composition x have been grown by molecular beam epitaxy(MBE).Superlattice structure withsmall values of x transfered from ZnSe as well to Zn1-xMnxSe as well has been observedfor the first time by PL measurements when the temperature increases.It is due to theanomalous behavior of energy gap at low x in Zn1-xMnxSe,which forms a bowing regionand the shape of this bowing and the dip in energy are dependent strongly as the temperature varies.It has been found by time-resolved photoluminescence spectra that the relaxation time of Mn++ ions excited states is much longer in superlattices than in films.This may be contributed to lowdimensional scaling effect on the exchange interaction between Mn++ ions.

关 键 词：稀磁半导体 ZnMnSe薄膜 外延生长 超晶格 

分 类 号：TN304.3[电子电信—物理电子学]