高阻ITO基板上电化学沉积ZnO薄膜的研究  

Electrochemical Deposition ZnO Thin Film on High Sheet Resistance ITO Glass Substrate

作　　者：侯旭峰[1] 荆海[1] 谷长栋[2] 张会平[2] 

机构地区：[1]中国科学院长春光学精密机械与物理研究所 [2]吉林大学材料科学与工程学院吉林大学汽车材料教育部重点实验室,吉林长春130025

出　　处：《液晶与显示》2007年第1期15-20,共6页Chinese Journal of Liquid Crystals and Displays

基　　金：国家自然科学基金(No.60576056);国家"863"计划(No.2004AA303560)资助项目

摘　　要：利用电化学沉积法,以65±1℃的0.1mol/LZn(NO3)2水溶液作为电解质溶液,在方块电阻为118Ω/□的氧化铟锡(ITO)玻璃基板上制备了ZnO薄膜。利用扫描电镜观察了ZnO薄膜表面形貌,结果表明随着电极电势的降低或沉积时间的增加,ZnO薄膜表面颗粒的六方形结构逐渐明显。利用X射线衍射技术分析了阴极电势和沉积时间对ZnO薄膜择优取向的影响,结果表明ZnO薄膜的(002)择优取向是随电极电势的下降而逐渐减弱的,而且随沉积时间的增加(002)择优取向也逐渐减弱。透射光谱测量表明,实验所获得的ZnO薄膜在可见光范围内是透光的,平均透过率高达80%～90%,不同阴极电势下的禁带宽度均为3.5eV左右,且在阴极电势为-2.5V时,禁带宽度随沉积时间的增加而逐渐减小。ZnO thin films were electrochemically deposited onto an indium tin oxide （ITO） glass substrate with a high sheet-resistance of 118 Ω/□ from an electrolyte consisted of 0.1 mL Zn（NO3 ）2 aqueous solution at 65±1 ℃. The surface morphology of the ZnO thin films was characterized by scanning electron microscope （SEM） and the results showed that the hexagonal structure on the ZnO thin films gradually become obvious with the increasing of the deposition time or reducing of cathode potential. X-ray diffraction （XRD） was used to analyze the effect of cathode potential and deposition time on preferred orientation of the ZnO thin film. It showed that （002）preferred orientation of the ZnO thin film decrease with reducing the potential and increasing the deposition. Optical transmittance spectra of the ZnO thin films showed the obtained ZnO films are transparent to visible light and the average optical transmittance values of ZnO thin films were about 80 %-90%. In addition, the bandgap energy which was independent of the applied cathode potential was about 3.5 ev, while it would shift towards low values as the deposition time increased at an applied cathode potential of --2.5 V.

关 键 词：ZNO薄膜 电化学沉积 ITO基板 禁带宽度 

分 类 号：O484.4[理学—固体物理]