双源电子束蒸发提高光学薄膜致密性的工艺研究  

Study of the Compact in Si/SiO_2 Optical Thin Film by Double Source Electron Beam Evaporation Technology

作　　者：赵妙[1] 谭满清[1] 周代兵[1] 吴旭明[1] 王晓东[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《光电子．激光》2007年第1期40-42,共3页Journal of Optoelectronics·Laser

摘　　要：采用双源电子束蒸发的方法,在K9玻璃基片上蒸镀Si和SiO2得到的混合膜层,折射率不仅可调,而且比Si膜要高。用原子力显微镜(AFM)分别对单纯镀的Si膜与双源电子束蒸发镀的Si/SiO2混合膜层的表面形貌进行了观测,结果表明,前者表面疏松,有明显的孔洞结构;后者膜层表面细密。采用双源蒸发的成膜理论,对该方法提高膜层致密性的原因进行了探讨。This paper introduces the formation of optical thin film by the double source electron beam evaporation, the Si/ SiO2 mixed thin film is evaporated on the K9 glass. The reflectivity index of the film is adjustable and the it is higher than that of the Si thin films. The Si thin film which is evaporated by the traditional ways and the Si/SiO2 mixed thin film evaporated by the double source electron beam have been characterized by atomic force microscopy（AFM）. It is found that the fabric of the first one with large holes is loose,and the structure of the last one is compact. The reasons are discussed on the theory of the thin film shape.

关 键 词：介质光学膜 致密性 双源电子束蒸发 折射率 蒸发速率 

分 类 号：O484[理学—固体物理]