一种新型硅基厚膜压力/温度传感器的设计和制作  

Design and Fabrication of a Novel Silicon Pressure/Temperature Microsensor

作　　者：张艳红[1] 刘兵武[1] 刘理天[1] 张兆华[1] 谭智敏[1] 林惠旺[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《传感技术学报》2006年第6期2376-2379,共4页Chinese Journal of Sensors and Actuators

基　　金：浙江省科技攻关重大专项支持(2005C11015)

摘　　要：设计并制作了一种新型传感器,它包含压阻式压敏元件和热敏元件两部分.其中压敏元件采用比常规更厚的50μm硅杯薄膜(500μm×500μm),增大了体硅上高应力区的面积,在降低工艺要求的同时提高了线性测量范围和过载压力.压敏电阻设计为折线结构,采用优化的几何尺寸,并将其部分制作在高应力体硅上以获得更高灵敏度.体硅上的温敏电阻随压敏电阻利用同步注入工艺制作,减小了工艺复杂度.该器件工艺简单,成品率高,与标准IC工艺兼容.初步的测试结果表明器件具有良好的性能.A novel microsensor consisted of piezoresistive and thermal resistive components is designed and fabricated. A 50μm thick silicon diaphragm is used, thicker than that of the conventional piezoresistive pressure sensor, which extends the high stress area in the bulk silicon, and increases the linear operating range as well as the burst pressure. Novel meandering shape piezoresistors are designed with optimized structure parameters, parts of which are fabricated on the high stress bulk silicon to obtain high sensitivi- ty. The thermistors are fabricated on the bulk silicon with the same implantation process as the piezoresis- tors. Good temperature linearity and sensitivity are obtained, and the fabrication is simplified. The whole fabrication is low-cost, high yield and compatible with the standard IC process. Primary measured results are presented.

关 键 词：压力/温度传感器 压阻效应 应力分布 集成工艺 

分 类 号：TP212.1[自动化与计算机技术—检测技术与自动化装置]