碳化硅薄膜的光学特性研究  

Optical Properties of Silicon Carbide Film

作　　者：于威[1] 吕雪芹[1] 宋维才[2] 路万兵[1] 傅广生[1] 

机构地区：[1]河北大学物理科学与技术学院,河北保定071002 [2]唐山师范学院物理系,河北唐山063000

出　　处：《河北大学学报（自然科学版）》2007年第1期24-27,共4页Journal of Hebei University(Natural Science Edition)

基　　金：河北省自然科学基金重点项目(503129)

摘　　要：采用螺旋波等离子体增强化学气相沉积(HW-PECVD)技术制备了纳米晶碳化硅(nc-SiC)薄膜,利用傅立叶红外吸收谱(FTIR)、X射线衍射谱(XRD)、紫外-可见透射光谱(UV-Vis)和光致发光谱(PL)对薄膜的结构、光学带隙、发光特性等进行了测量和分析.结果表明,所沉积薄膜主要以Si-C键合结构存在,薄膜中包含有立方结构的3C-SiC晶粒,光学带隙2.59 eV,室温下薄膜表现出强的可见蓝色光致发光,发光峰位随氙灯激发波长的增加呈现红移现象,并将此发光归因于量子限制效应作用的结果.The film of nanocrystalline silicon carbide（nc-SiC） is prepared by helicon wave plasma enhanced chemical vapor deposition （HW-PECVD） technique. Fourier transform infrared spectroscopy（FTIR）, X-ray diffraction（XRD）, ultraviolet-visible transmission spectroscopy （UV-Vis） and photoluminescence （PL） spectra are used to analyze the film structure, optical band gap and luminescence properties. The results indicate the bonding structure of the film is mainly in the form of Si-C bonds and cubic 3C-SiC crystals are present. From the measurement of UV-Vis spectrum the optical band gap is obtained to be 2.59 eV. At room temperature a strong blue emission is observed and a PL peak redshift is detected with the increase of excitation wavelength under a Xe lamp excitation. The luminescence mechanism is discussed based on the carrier quantum confinement in nanosized SiC grains.

关 键 词：SIC薄膜 薄膜结构 光学带隙 光致发光 

分 类 号：O484.41[理学—固体物理]