高速率、低价位、智能化“3C”光网络呼唤Si基化、集成化SOC芯片  

Si Based Integrated SOC Chip:The Key of High-speed,Low-cost and Smart 3C Optica Network

作　　者：王启明[1] 

机构地区：[1]集成光电子国家重点联合实验室中国科学院半导体研究所,北京100083

出　　处：《光电子．激光》2007年第3期257-262,共6页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(60336010);国家重点基础研究计划资助项目(2006CB302802)

摘　　要：Si是微电子发展的无可替代基质材料,取之不尽,工艺成熟,立足于Si基材料,发展光网络SOC芯片,是突破上述困扰的重要途径。然而Si属间接带隙,又为立方反演对称的非极性材料,不具优异的天然光学特性。人工改性是突破Si材料本征限制的根本出路,能带工程、纳米工程、局域化工程、光子工程以及声子工程的综合运用,有望实现Si基化全光波长变换器,高速率全光开关乃至Si基激光器,为Si基化、集成化光网络SOC芯片的发展奠定基础,并将开拓出一门崭新的Si基集成光子学。Si is the irreplaceable substrate materials of microclectronics because it is never used up and the process is mature. Developing the SOC chips of the optical network with Si based materials is an improtant approach to overcome the above mentione difficulties. Si has an indirect gap and it is a kind material of cubic inversionsymmetry, it does not have excellent natural optical characeristics. Artificial modification is the basic approach to break the intrinsic limitation of Si based materials. The combination of gap engineering, nanoengineering,localization engineering, photon engineering and phonon engineering is expected to realize Si based all optical wavelnegth converter,high-speed all optical switch and even Si based laser,which will be the important base for the developing of the SOC chips in the integrated optical netowrk and the opening of the novel subject of Si based integrated photonics.

关 键 词：硅基材料 集成芯片 人工改性 能带工程 局域化工程 纳米工程 

分 类 号：TN29[电子电信—物理电子学] TN256