多晶硅太阳电池酸腐表面织构的研究  

Texturing of Multicrystalline Silicon Wafers for Solar Cells with Acidic Etching Solutions

作　　者：王立建[1] 刘彩池[1] 孙海知[1] 郝秋艳[1] 

机构地区：[1]河北工业大学信息功能材料研究所,天津300130

出　　处：《光电子．激光》2007年第3期289-291,共3页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(50572022)

摘　　要：采用酸腐多晶Si片的方法,获得了各向同性的表面织构。酸腐蚀液选取HF-HNO3混合溶液,并用H3PO4进行改良。分别利用扫描电镜(SEM)和光谱响应系统,分析了腐蚀后多晶Si片的表面形貌和反射率。结果表明,酸腐多晶Si表面分布均匀的蚯蚓状腐蚀坑,反射率很低,在等离子增强化学气相沉积(PECVD)Si3N4减反射膜后,反射率大大下降。Multicrystalline silicon（mc-Si） wafers were isotropically textured using add texturing methods. The acid etching solution was an aqueous solution of nitric acid（HNO3 ） and hydrofluoric acid（HF） for the investigation of the wet chemical approach,and it was modified with H3PO4. The mc-Si surface morphology and reflectance were analyzed by scanning electron microseope（SEM） and spectrum response system respectively. Results showed that the surface etched by the add solution was distributed with uniform earthworm-like etched-pits,and it had a very low reflectance. After PECVD Sia N4 the reflectance decreased remarkably.

关 键 词：表面织构 多晶Si 太阳电池 

分 类 号：TN366[电子电信—物理电子学]