Investigation of spectrum blue shift in organic quantum well electroluminescent devices  

作　　者：HUANG Jin-zhao XU Zheng 

机构地区：[1]Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China

出　　处：《Optoelectronics Letters》2007年第1期37-39,共3页光电子快报（英文版）

基　　金：the National Nature Science Foundation ofChina (60576016,10374001), the National Key Basic Research Spe-cial Foundation of China (2003CB314707),The National High Tech-nology Research and Development Program of China(2006AA0380412),the Beijing City Natural Science Foundation(2073030), the Key Item of National Nature Science Foundation ofChina (10434030),and the Excellent Doctor’s Science and Technol-ogy Innovation Foundation of Beijing Jiaotong University(48010).

摘　　要：In this paper, the organic quantum well devices,which are similar to the type-Ⅱ quantum well of inorganic semiconductor, have been fabricated, in which the NPB (N,N’-Di-[(1-naphthalenyl)-N,N’-diphenyl]-(1,1’-biphenyl)-4,4’-diamine) and Alq3 (Tris-(8-quinolinolato)aluminum) act as the potential barrier layer and the potential well layer, respectively. In the electroluminescence, the blue shift of spectrum with the decreasing of well width is observed for the device with different well width, and this is interpreted by combination of quantum size effect and exciton confinement effect. The blue shift of spectrum with increasing applied voltage is observed for the same device, and this is interpreted in terms of polarization effect and quantum size effect.

关 键 词：有机量子阱场致发光装置 光谱蓝移 势垒层 极化效应 

分 类 号：TN383.1[电子电信—物理电子学]