RF磁控溅射法原位制备C轴择优取向ZnO薄膜  

In Situ Deposition of C-axis Oriented ZnO Thin Films by RF Magnetron Sputtering

作　　者：程松华[1] 曾祥斌[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《半导体光电》2007年第1期60-63,共4页Semiconductor Optoelectronics

摘　　要：采用RF磁控溅射法在玻璃衬底上原位低温生长ZnO薄膜。生长出的薄膜对可见光具有高于90%的透射率,该薄膜具有良好的C轴取向。利用X射线衍射(XRD)的测试结果,分析了溅射工艺条件如衬底温度、氩氧比和溅射气压等对薄膜性能的影响,得到最佳的生长工艺条件为:衬底温度300℃,溅射气压1 Pa,氩氧比为25 sccm∶15 sccm。在此条件下生长的ZnO薄膜具有良好的C轴择优取向,并且薄膜的结晶性能良好。采用这种方法制备的ZnO薄膜适合用于制备平板显示器的透明薄膜晶体管和太阳电池的透明导电电极。ZnO thin films were deposited in situ on glass substrates at a low temperature by radio frequency（RF） magnetron sputtering technique.The grown films are highly transparent and highly C-axis oriented.The optical transmission of the films in the visible part of the spectrum is more than 90%.The influence of sputtering process parameters,such as substrate temperature,Ar/O2 ratio and sputtering pressure on the film characteristics was investigated by X ray diffraction（XRD）.The results show that when the substrate temperature is 300 ℃, the sputtering pressure is 1 Pa,the Ar ： O2 ratio is 25 sccm ： 15 sccm,the film grown is highly C-axis oriented,and the film has a good crystallinity. The ZnO thin films can be used as active layers in transparent thin film transistors of flat panel displays, and transparent electrodes in solar cells.

关 键 词：RF磁控溅射 ZNO薄膜 透明薄膜晶体管 有源矩阵液晶显示器 

分 类 号：TN304.055[电子电信—物理电子学]