采用原电池法制备纳米多孔硅  

Preparation of the Nanometer Porous Silicon Using Galvanic Element Method

作　　者：宗杨[1] 胡明[1] 窦雁巍[1] 刘志钢[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《纳米技术与精密工程》2007年第1期28-32,共5页Nanotechnology and Precision Engineering

基　　金：国家自然科学基金资助项目(60371030).

摘　　要：利用原电池法在硅片表面制备了纳米多孔硅层；用扫描电镜SEM和原子力显微镜AFM观察了多孔硅表面形貌：原电池法与电化学法得到的多孔硅孔径均在10～20nm范围．研究结果表明：铂膜电极厚度的增大以及铂膜电极与暴露硅片面积比的增大，会导致多孔硅层的厚度增大．热学模拟结果表明：以纳米多孔硅作为绝热层可获得与悬浮结构相同的效果．The porous silicon on the surface of the bulk silicon is formed using galvanic element method. The surface morphology of porous silicon is observed with SEM and AFM . The apertures of the porous silicon, which adopt electrochemistry method and galvanic element method, are both in the range of 10-20 nm. The results show that the increase of the thickness of platinum electrode and the proportion of the platinum electrode and the exposed silicon chip will lead to the increase of the thickness of the porous silicon. Thermal simulation shows that the same effect can be obtained using porous silicon as a thermal insulated material as using suspended structure.

关 键 词：原电池法 纳米多孔硅 绝热 

分 类 号：TN304.12[电子电信—物理电子学]