ZnO纳米线双绝缘层结构电致发光器件制备及特性研究  

Development and behavior study of a ZnO nanowire-based electroluminescence device with double insulating-layer structure

作　　者：常艳玲[1] 张琦锋[1] 孙晖[1] 吴锦雷[1] 

机构地区：[1]北京大学信息科学技术学院纳米器件物理与化学教育部重点实验室,北京100871

出　　处：《物理学报》2007年第4期2399-2404,共6页Acta Physica Sinica

基　　金：国家重点基础研究发展规划(批准号:2001CB610503);国家自然科学基金(批准号:60471007;60471008;90406024;50672002);北京市自然科学基金(批准号:4042017)资助的课题.~~

摘　　要：在利用液相法生长ZnO纳米线薄膜的基础上,构造成功基于ZnO纳米线双绝缘层结构的交流电致发光器件.此器件呈现出良好的阻容特性,在室温下以一定频率的交流电压驱动,可观察到近紫外波段387nm处和可见光波段552nm处的发射谱带.从阻容结构的导电特性及ZnO纳米线材料的能带结构等方面探讨了这种器件的电致发光机理及频率特性.ZnO nanowire thin film was prepared by chemical solution method and a ZnO nanowire-based electroluminescence device has been successfully developed. The device was driven by the alternating current and presented a good RC behavior. Under the action of applied bias, light emission in the ultraviolet region with the wavelength of 387 run and in the visible region with 552 run has been observed. The mechanism of electroluminescence and its frequency dependence are discussed in this paper by analyzing the electric properties of the device and the structure of energy band of ZnO semiconductor.

关 键 词：ZnO 纳米线 电致发光 

分 类 号：O472.3[理学—半导体物理]