直流溅射ZnO导电靶制备ZnO:Al透明导电薄膜  

Fabrication of Transparent Conductive ZnO:Al Films by Direct Current(DC) Sputtering with a Highly Conductive ZnO Ceramic Target

作　　者：方斌[1] 官文杰[1] 陈欣[1] 陈志强[1] 

机构地区：[1]武汉大学物理科学与技术学院,武汉430072

出　　处：《武汉理工大学学报》2007年第4期52-54,共3页Journal of Wuhan University of Technology

摘　　要：利用直流(DC)磁控溅射导电率良好的ZnO:Al陶瓷制备ZnO:Al透明导电薄膜。在不同的温度下对靶的溅射得到的薄膜进行X-ray、AFM、霍尔系数的测量等的分析,研究了溅射温度对膜的薄膜结构电学和光学性能的影响。制得的薄膜均为(002)面的单一择优取向,且当温度为300℃时,有最低的电阻率为6.33×10-4Ωcm。薄膜在可见光部分的透射率都在80%以上。Transparent conductive ZnO： Al films were deposited on glass sheet substrates by De reactive magnetron sputtering, by using a highly conductive ZnO ceramic target. The effects of substrate temperature on structural, electrical and optical properties of the ZAO thin films were characterized by several techniques. The results showed that all the films were c-axis oriented, and the lowest electrical resistivity of the ZAO films, achieved at 300 12, was 6.33 × 10^-4 Ωcm. The average transmission of ZAO films in the visible range was 80 %.

关 键 词：ZnO:Al(ZAO)薄膜 直流(DC)磁控溅射 电学性能 

分 类 号：TN304.21[电子电信—物理电子学]