低介电高强度多孔氮化硅陶瓷的研制  

Low Dielectric High Strength Properties Porous Silicon Nitride Ceramics Development

作　　者：廖荣[1] 程之强[1] 胡利明[1] 王重海[1] 袁维军[1] 张训虎[1] 

机构地区：[1]山东工业陶瓷研究设计院

出　　处：《现代技术陶瓷》2007年第1期3-5,23,共4页Advanced Ceramics

摘　　要：以氮化硅为基体,通过加入一定量的特殊无机添加剂,控制好相关工艺参数成功地制备出低密高强低介电的多孔氮化硅材料。采用有机涂层对多孔氮化硅材料表面进行封孔处理,通过对封孔前后材料电性能的对比分析得出:涂层对封孔后表面致密的整体材料电性能影响微小。Take the silicon nitride as the substrate, through joins the ration the special inorganic chemical additive, controls the good correlation craft parameter successfully to prepare the low density high strength low dielectric porous silicon nitride material. Uses the organic coating to carry on to the porous silicon nitride material surface seals hole processing. Through to seals around the hole the material electricity performance contrast analysis to obtain：The coating after seals the hole the superficial compact overall material electricity performance influence to be small.

关 键 词：多孔陶瓷 氮化硅 无机添加剂 封孔 电性能 

分 类 号：TQ174.758[化学工程—陶瓷工业]