化合物半导体异质外延层中的缺陷  

Lattice Defects in the Heteroepitaxial Layer of Compound Semiconductors

作　　者：朱健[1] 施天生[1] 

机构地区：[1]中国科学院上海冶金所

出　　处：《分析测试通报》1990年第5期72-73,共2页

摘　　要：本文报道了用MBE方法在Si(100)上生成GaAs和用MOCVD方法在GaAs(100)上生成CdTe的异质外延层中的某些缺陷。用JEM-4000EX和JEM-200CX电镜观察,电子束沿晶体的[011]方向入射,观察到的晶体缺陷运用高分辨像和选区衍射技术进行研究和分析。结果表明CdTe/GaAs中主要缺陷是失配位错及微孪晶,而在GaAs/Si中还含有反相无序。The lattice defects in the heteroepitaxial layers of GaAs on Si (100) grown by MBE andCdTe on GaAs (100) grown by MOCVD have been examined respectively by EM of using JEM-4000EX and JEM-200CX. Tee electron beam is along its [011] direction of crystal. The latticedefects wrre studied and analysed by high resolution lattice image and SAD pattern. It is shownthat the main defects are mismatch dislocations and microtwin in CaTe/GaAs, but in GaAs/Si theantiphase disorder is also included.

关 键 词：异质外延层 化合物半导体 缺陷 

分 类 号：TN304.2[电子电信—物理电子学]