39.5-GHz 0.2-μm PHEMT 2：1 Dynamic Frequency Divider  

作　　者：DING Jingfeng WANG Zhigong QIU Yinghua ZHU En LI Wei 

机构地区：[1]Institute of Radio Frequency and Optoelectronic Integrated Circuits, Southeast University, Nanjing 210096, China

出　　处：《Chinese Journal of Electronics》2007年第1期51-53,共3页电子学报（英文版）

摘　　要：A 39.SGHz 2：1 dynamic frequency divider Integrated circuit （IC） has been realized in a 0.2-μm gatelength AlGaAs/GaAs Pseudomorphic high electron mobility transistor （PHEMT） technology with an fT of about 60GHz. Coplanar waveguides （CPW） were used as inductors to achieve broadband input impedance match and high integration. A push-pull active source-follower was applied to broaden the circuit bandwidth without consuming additional power. The single-ended inputs and differential outputs benefit many applications. The divider IC can operate at the highest frequency of 39.SGHz with single-ended input clock via on-wafer testing. The measured spot phase noise of the 19.75GHz output signal is -100.17dBc/Hz at a frequency offset of 10K. The chip size is 1.0 × 0.7mm^2 and the power dissipation is 400mW under a -3.3V supply.

关 键 词：Frequency divider LATCH GAAS CPW （Coplanar waveguides）. 

分 类 号：TN915.6[电子电信—通信与信息系统]