GaAs/AlAs DBR的GSMBE优化生长及表征  

GaAs/AlAs DBR Optimized Growth by GSMBE and Its Characterization

作　　者：谢正生[1] 吴惠桢[1] 劳燕锋[1] 刘成[1] 曹萌[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室

出　　处：《稀有金属材料与工程》2007年第4期587-591,共5页Rare Metal Materials and Engineering

基　　金：国家重点基础研究发展计划("973"计划)(2003CB314903)

摘　　要：采用气态源分子束外延(GSMBE)技术优化生长了GaAs/AlAs分布布拉格反射镜(DBR)材料,并用X射线衍射(XRD)及反射光谱对其生长质量进行了表征。结果表明,采用5s间断生长的GaAs/AlAs DBR材料质量和界面质量优于无间断生长,并且10对GaAs/AlAs DBR的质量优于30对,说明DBR对数越多,周期厚度波动越大,材料质量越差。优化生长得到的30对GaAs/AlAs DBR的反射率大于99%,中心波长为1316nm,与理论设计结构的模拟结果基本一致,可用作1.3μm垂直腔面发射激光器(VCSEL)直接键合的反射腔镜。GaAs/AlAs DBR （distributed Bragg reflector） was optimized grown by gas source molecular beam epitaxy （GSMBE）. Its growth quality was＂ investigated by using X-ray Diffraction （XRD） rock curve, mapping with three axes and two dimensions, and reflectivity spectra. As demonstrated, when growing the GaAs/AlAs DBR by GSMBE, it is better for the material and interface quality with 5 seconds interval than that without it. The quality of 10 pairs DBR is better than that of 30 pairs. It is indicated that the more the pairs of DBR has, the bigger the fluctuation of the period thickness would be, and the worse the material quality would be. GaAs/AlAs DBR of 30 pairs optimized grown by GSMBE has the reflectivity with larger than 99%, the centre wavelength is 1316 nm, and its quality is in consonance with the designed structure. So it could be used as the reflective cavity of 1.3μm vertical cavity surface emitting lasers （VCSEL） which has the direct-bonding structure.

关 键 词：分布布拉格反射镜 气态源分子束外延 X射线衍射 反射谱 

分 类 号：TN253[电子电信—物理电子学]