Roughening surface morphology on free-standing GaN membrane with laser lift-off technique  

作　　者：WANG Ting GUO Xia FANG Yuan SHEN GuangDi 

机构地区：[1]School of Mechatronic Engineering, Beijing Institute of Technology, Beijing 100081, China [2]Institute of Electronic Information & Control Engineering, Beijing University of Technology, Beijing Optoelectronic Technology Laboratory, Beijing 100022, China

出　　处：《Chinese Science Bulletin》2007年第7期1001-1005,共5页

基　　金：Supported by the National High Technology Research and Development Program of China (Grant No. 2004AA311030);State Key Program of Basic Research of China (973) (Grant No. 20000683-02);Beijing Municipal Education Commission (Grant No. 2002kj018, Grant No. kz200510005003);Beijing Municipal Science and Technology Commission (Grant No. D0404003040221)

摘　　要：An ultraviolet (UV) laser lift-off (LLO) technique was presented to form a roughened surface morphol-ogy on GaN membrane grown by metalorganic chemical vapor deposition (MOCVD). The etched sur-face showed cone-like structures on a free-standing GaN membrane. Based on the scanning electron microscopy (SEM) and atom force microscopy (AFM) measurements, the etching mechanism was proposed, which was related to the different decomposition depth caused by the dislocations in the GaN membrane. The etching efficiency and morphology of GaN by the LLO technique and the photo-electrochemical (PEC) wet etching technique was compared and analyzed. This roughed cone-like surface morphology by LLO can enhance the external efficiency of vertical structure n-side-up GaN-based light-emitting diodes (LEDs) simultaneously while being released of the performance con-strains impeded by sapphire.An ultraviolet （UV） laser lift-off （LLO） technique was presented to form a roughened surface morphology on GaN membrane grown by metalorganic chemical vapor deposition （MOCVD）. The etched surface showed cone-like structures on a free-standing GaN membrane. Based on the scanning electron microscopy （SEM） and atom force microscopy （AFM） measurements, the etching mechanism was proposed, which was related to the different decomposition depth caused by the dislocations in the GaN membrane. The etching efficiency and morphology of GaN by the LLO technique and the photoelectrochemical （PEC） wet etching technique was compared and analyzed. This roughed cone-like surface morphology by LLO can enhance the external efficiency of vertical structure n-side-up GaN-based light-emitting diodes （LEDs） simultaneously while being released of the performance constrains impeded by sapphire.

关 键 词：氮化钾薄膜 GAN 激光剥离技术 粗糙表面 表面形态 湿法化学蚀刻 

分 类 号：TN304.23[电子电信—物理电子学]