PLD制备铁电薄膜工艺参数的研究现状  

Research status of the technical parameters of the pulsed laser deposited ferroelectric thin films

作　　者：赵亚凡[1] 陈传忠[2] 宋明大[3] 

机构地区：[1]山东建筑大学理学院,山东济南250014 [2]山东大学材料科学与工程学院,山东济南250061 [3]山东大学机械工程学院,山东济南250061

出　　处：《红外与激光工程》2007年第2期175-178,264,共5页Infrared and Laser Engineering

基　　金：山东省优秀中青年科研奖励基金资助项目(02BS056)

摘　　要：铁电薄膜在微电子学、光电子学、集成光学和微电子机械系统等领域有着广泛的应用(前景)。脉冲激光沉积(PLD)在铁电薄膜制备方面显示出独特的优越性。介绍了PLD的原理、特点;综述了PLD工艺参数,包括衬底温度、氧气压力、靶材结构与成分、能量密度、靶基距离、缓冲膜以及退火工艺等的研究现状;展望了PLD制备铁电薄膜的应用前景。Ferroelectfic thin film has wide application in the fields of microelectronics, optoelectronics, integrated optics and micro-electrical mechanical system. Pulsed laser deposition shows an unique advantage for the deposition of ferroelectfic thin film. The mechanism and characteristics of PLD are discussed. Research statuse of the technical parameters of the pulsed laser deposited ferroelectric films, including substrate temperature, oxygen pressure, target composition and structure, energy density, target-to-substrate distance, buffer layer,and post-annealing processing are reviewed in detail. The future application trend is also prospected.

关 键 词：脉冲激光沉积 铁电薄膜 工艺参数 

分 类 号：TN249[电子电信—物理电子学]