脉冲时间对N^+离子注入猴头菌丝生长速度的影响  

EFFECT OF PULSE LASTING TIME OF ION IMPLANTATION ON THE GROWTH OF Hericium ernaceus

作　　者：严涛[1] 李冠[1] 曾宪贤[2] 

机构地区：[1]新疆大学生命科学与技术学院,新疆乌鲁木齐830046 [2]新疆大学离子束生物工程中心,新疆乌鲁木齐830008

出　　处：《核农学报》2007年第2期128-131,共4页Journal of Nuclear Agricultural Sciences

基　　金：国家发改委高技术产业化示范工程项目([2004]2077)

摘　　要：利用低能离子束生物技术对猴头菌进行诱变选育,通过分析N+离子注入后猴头菌丝体的生长速度,研究脉冲时间对N+离子注入猴头菌丝体的影响。结果表明:脉冲时间从小到大的变化对N+离子注入猴头菌丝生长速度的整体影响呈先下降,后上升,再下降的“马鞍型”曲线。证明在注入剂量相同的前提下脉冲时间对N+离子注入猴头菌丝的生长速度有影响。Low energy ion implantation technology was used in mutation breeding of Hericium erinaceus. The growth speed of the Hericium erinaceus hypha is as an index to study the influence of the pulse lasting time of N^＋ ion implantation. The result shows that the growth speed of Hericium erinaceus hypha presents ＂saddle shape＂ curve, which was descend first, then rising up and descend again when the N^＋ ion implantation. When the pulse time lasts for longer and longer. It is concluded that the pulse time obviousl influence dosage keeps the same.

关 键 词：N^+离子注入 猴头菌 生长速度 脉冲时间 

分 类 号：S646[农业科学—蔬菜学]