多孔硅异质结电致发光器件发光特性研究  

Study on properties of electroluminescence from porous silicon heterojunction device

作　　者：杨亚军[1] 李清山[1] 刘宪云[1] 

机构地区：[1]曲阜师范大学物理工程学院,曲阜273165

出　　处：《激光技术》2007年第2期166-168,共3页Laser Technology

基　　金：山东省自然科学基金资助项目(Y2002A09)

摘　　要：多孔硅电致发光性质的研究对于实现硅基光电集成具有重要的应用价值。采用蒸镀-阳极氧化法制备了多孔硅异质结(ITO/PS/p-Si/Al)电致发光器件,在7.5V较低电压下实现了数小时连续电致发光,并给出了该器件的发光和电学性能的测量结果。结果表明,要制备较好发光性能和伏安特性的多孔硅电致发光器件,顶部电极应同时具有较高的透光率和电导率。Study on electroluminescence from porous silicon （PS） has important application value in silicon-based photoelectron integration. Electrically induced visible light-emitting PS device with structure of ITO/PS/p-Si/Al were fabricated by means of evaporation-anodic oxidation method. The light emission of the device lasted for a few hours under 7.5V forward bias conditions. Luminescent and electronic properties were investigated. Results suggest that ITO thin films should have both high electrical conductivity and optical transmittance in order to achieve light-emitting PS device with fine luminescent and currentvoltage properties.

关 键 词：光电子学 电致发光 蒸镀邛日极氧化法 多孔硅 

分 类 号：O472[理学—半导体物理]