氮化ZnO/Ga_2O_3薄膜合成GaN纳米管  

Synthesis of GaN nanotubes through nitriding ZnO/Ga_2O_3 film

作　　者：庄惠照[1] 高海永[1] 薛成山[1] 王书运[1] 何建廷[1] 董志华[1] 

机构地区：[1]山东师范大学半导体研究所,山东济南250014

出　　处：《材料科学与工艺》2007年第1期121-123,共3页Materials Science and Technology

基　　金：国家自然科学基金重大研究计划资助项目(80201002;90201025)

摘　　要：利用射频磁控溅射法在Si(111)衬底上先溅射ZnO中间层,接着溅射Ga2O3薄膜,然后ZnO/Ga2O3薄膜在管式炉中常压下通氨气进行氮化,高温下ZnO层在氨气的气氛中挥发,而Ga2O3薄膜和氨气反应合成出GaN纳米管.X射线衍射(XRD)测量结果表明利用该方法制备的GaN具有沿c轴方向择优生长的六角纤锌矿结构.利用傅里叶红外光谱(FTIR)研究了所制备样品的光学性质.利用透射电子显微镜(TEM)和选区电子衍射(SAED)观测了样品的形貌和晶格结构.ZnO middle layers were sputtered on Si （ 111 ） substrates using radio frequency （ r. f. ） sputtering system,then Ga203 films were sputtered on them. ZnO/Ga2O3 films were nitrided in tube furnace under flowingNH3 ambience. ZnO volatilized in NH3 ambience at high temperature ,at the same time Ga2O3 reacted with NH3 and synthesized GaN nanotubes. The measurement result of X - ray diffraction （XRD） revealed that the as - prepared GaN crystal were grown in c axis orientation with hexagonal wurtzite structure. Fourier transform infrared spectrophotometer （FTIR） was used to measure FTIR spectrum of the samples. The morphology and the structure of GaN nanotubes were studied by transmission electron microscope （TEM） and the selected area electron diffraction （SAED）.

关 键 词：GaN纳米管 ZnO/Ga2O3薄膜 射频磁控溅射 氮化 

分 类 号：TN304.2[电子电信—物理电子学]