基片温度对Ni_(80)Fe_(20)薄膜结构和各向异性磁电阻的影响  

Effects of Substrate Temperature on the Structure and Anisotropic Magnetoresistance of Ni_(80)Fe_(20) Thin Films

作　　者：王合英[1] 沙文杰[1] 陈欢[1] 孙文博[1] 

机构地区：[1]清华大学物理系,北京100084

出　　处：《金属功能材料》2007年第2期1-4,共4页Metallic Functional Materials

摘　　要：本文用磁控溅射方法制备出一系列Ni80Fe20磁性薄膜，研究不同基片温度对薄膜结构和各向异性磁电阻的影响。基片温度在150～180℃时制备的Ni80Fe20薄膜具有较大的各向异性磁电阻效应和较低的磁化饱和场。X射线衍射仪和扫描电子显微镜测量结果表明，基片温度通过改变薄膜的晶体结构、晶粒大小和均匀性等微观结构改变薄膜的零场电阻率和各向异性磁电阻，文章对实验结果做出了详细分析。A series of Ni80Fe20 magnetic thin films were prepared by magnetron sputtering method. Elects of substrate temperature on the structure and anisotropic magnetoresistance （AMR） of Ni80Fe20 thin films had been investigated. The Ni80Fe20 films prepared at the substrate temperatures of 150～180℃ showed a higher AMR value and a lower saturation magnetic field. X-ray diffraction and scan electron microscope measurement exhibited that the substrate temperature could influence the resistance at zero magnetic field and AMR value by changing the crystal structure, microstructure such as grain size and distribution of the Ni80Fe20 thin films. The results had been discussed in detail.

关 键 词：Ni80Fe20薄膜 基片温度 结构 各向异性磁电阻 

分 类 号：O484.4[理学—固体物理]