The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si（111） substrates  

作　　者：刘喆 王晓亮 王军喜 胡国新 郭伦春 李晋闽 

机构地区：[1]Novel Semiconductor Material Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

出　　处：《Chinese Physics B》2007年第5期1467-1471,共5页中国物理B（英文版）

摘　　要：AlN/GaN superlattice buffer is inserted between GaN epitaxiai layer and Si substrate before epitaxiai growth of GaN layer. High-quality and crack-free GaN epitaxiai layers can be obtained by inserting AlN/GaN superlattice buffer layer. The influence of AlN/GaN superlattice buffer layer on the properties of GaN films are investigated in this paper. One of the important roles of the superlattice is to release tensile strain between Si substrate and epilayer. Raman spectra show a substantial decrease of in-plane tensile strain in GaN layers by using AlN/GaN superlattice buffer layer. Moreover, TEM cross-sectional images show that the densities of both screw and edge dislocations are significantly reduced. The GaN films grown on Si with the superlattice buffer also have better surface morphology and optical properties.AlN/GaN superlattice buffer is inserted between GaN epitaxiai layer and Si substrate before epitaxiai growth of GaN layer. High-quality and crack-free GaN epitaxiai layers can be obtained by inserting AlN/GaN superlattice buffer layer. The influence of AlN/GaN superlattice buffer layer on the properties of GaN films are investigated in this paper. One of the important roles of the superlattice is to release tensile strain between Si substrate and epilayer. Raman spectra show a substantial decrease of in-plane tensile strain in GaN layers by using AlN/GaN superlattice buffer layer. Moreover, TEM cross-sectional images show that the densities of both screw and edge dislocations are significantly reduced. The GaN films grown on Si with the superlattice buffer also have better surface morphology and optical properties.

关 键 词：GAN Si substrate metalorganic chemical vapour deposition superlattice buffer 

分 类 号：TN304.23[电子电信—物理电子学]