提高高频晶闸管di/dt耐量的研究  

Study on improving d i /d t capability of high frequency thyristors

作　　者：王晓彬[1] 王培清[1] 张斌[1] 

机构地区：[1]清华大学核能技术设计研究院

出　　处：《清华大学学报（自然科学版）》1997年第1期106-109,共4页Journal of Tsinghua University(Science and Technology)

摘　　要：为提高高频晶闸管的动态指标和高频性能，通过实验分析和理论推导，研究了工艺参数和设计参数对高频晶闸管ｄｉ／ｄｔ耐量的影响。实验结果表明：较低的一扩浓度，较薄的基区宽度以及用高能电子辐照控制少子寿命，有利于提高ｄｉ／ｄｔ耐量。通过对相同工艺三种不同阴极图形的８００Ａ、１０ｋＨｚ高频晶闸管ｄｉ／ｄｔ的研究，论证了合理确定辅助晶闸管面积对提高ｄｉ／ｄｔ的重要性，并指出，在大面积高频晶闸管中设计二级放大门极，有利于提高ｄｉ／ｄｔ耐量。The d i /d t capability is one of important dynamic parameters of high frequency thyristors. The effects of technological and designing parameters on d i /d t capability are studied by means of both experimental research and theoretic analysis. The results have shown that a lower P + diffusion concentration, a thinner P + base width and minority carrier liftime control by high energy electron irradiation are a great helpful to improve d i /d t capability. Three different patterns of cathode configuration under the same technoloical process for 800 A, 10 kHz high frequency thyristors have proved that reasonable determination of pilot thyristor area is very important, at the mean time, designing two cascade amplifier gate in large area high frequency thyristors is also beneficial to improve d i /d t capability.

关 键 词：高频晶闸管 di/dt耐量 放大门极 晶闸管 

分 类 号：TN34[电子电信—物理电子学]