LP-MOVPE生长的1.3μm InGaAsP/InP张压应变交替MQW特性  

Characteristic of 1.3μm InGaAsP/InP Tensile and Compressive Strained Alternated MQW Grown by LP-MOVPE

作　　者：王志杰[1] 陈博[1] 王圩[1] 张济志[1] 朱洪亮[1] 周帆[1] 金才政[1] 马朝华[1] 王启明[1] 

机构地区：[1]国家光电子工艺中心集成光电子学国家重点联合实验室中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》1997年第3期232-236,共5页半导体学报（英文版）

摘　　要：本文在国内首次报道了LP－MOVPE法生长高质量的压、张应变交替InGaAsP多量子阶结构的研制过程及其材料的高精度X射线双晶摇摆衍射曲线和光致发光谱特性表征．在此材料基础之上制作的平面掩埋条形结构激光器经过双腔面镀增透射膜后，其TE模与TM模自发发射谱光强差为3dBm，呈现偏振补偿特性．High quality 1. 3μm InGaAsP/InP gain medium with tensile and compressive strained multi-quanturn wells grown by Low Pressure Metalorganic Chemical Vapor Deposition(LP-MOCVD) is reported. The Anti-Reflection film coated PBH laser based on this structure is found that the power difference of transverse electric(TE) and transverse magnetic(TM) spontaneous emissions is only 3dB which indictes to have approximate gain in both TE and TM modes.

关 键 词：LP-MOVPE生长 材料 半导体 多量子阱结构 

分 类 号：TN304.05[电子电信—物理电子学]