多孔硅形貌的观测与生长机理分析  

The Morphology and Formation Mechanism of Porous Silicon

作　　者：沈桂芬[1] 黄和鸾[1] 王正荣[1] 高博静[1] 刘岩[1] 郭兴家[1] 李莹[1] 

机构地区：[1]辽宁大学

出　　处：《电子显微学报》1997年第1期39-43,共5页Journal of Chinese Electron Microscopy Society

摘　　要：本文在实验基础上，对多孔硅的形成形貌学进行了研究。用日立Ｓ－７５０型扫描电镜观测了不同条件下生长的多孔硅的正面和侧面孔的形貌。对得到的实验结果进行了较为详细的分析。The formation and topography of porous silicon was studied based on experiments.The topography of top view and lateral view of holes of porous silicon grown under different conditions was observed,by using Hitachi S 750 SEM.The experimental results are useful for further research on the application of porous silicon to the semiconductor device.

关 键 词：多孔硅 阳极氧化 量子限制效应 形貌学 生长机理 

分 类 号：TN304.12[电子电信—物理电子学]