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作 者:刘文[1] 王质武[1] 杨清斗[1] 刘毅[2] 卫静婷[1] 唐伟群[1]
机构地区:[1]深圳大学光电子学研究所,广东省光电子器件与系统重点实验室,光电子器件与系统教育部重点实验室 [2]深圳大学师范学院,深圳518060
出 处:《硅酸盐学报》2007年第5期616-618,623,共4页Journal of The Chinese Ceramic Society
基 金:留学回国人员科研启动基金(教外司留2001-498)资助项目
摘 要:采用直流磁控溅射法在石英衬底上制备了氮化铝(AlN)薄膜。用 X 射线衍射仪分析了薄膜结构。利用椭圆偏振仪和紫外/可见/近红外分光光度计对 AlN 薄膜进行了相关光学性能的研究,获得到了薄膜的折射率随波长的色散关系曲线。在波长为 250~1 000 nm,薄膜的折射率为 1.87~2.20。结合透射光谱图,分析了 AlN 薄膜的光学性质。结果表明:利用磁控溅射方法可以获得(100)择优取向 AlN 薄膜;AlN 薄膜在 200~300 nm 远紫外光范围内具有强烈的吸收,在 300~1000 nm 波长范围内具有良好的透过率。透射光谱图计算得到的薄膜厚度(427 nm)与椭圆偏振拟合得到的薄膜厚度(425 nm)一致。The structure and optical properties of aluminum nitride thin film deposited on quartz substrate by using a direct current magnetron reactive sputtering system were studied by X-ray diffraction, spectroscopic ellipsometry and ultraviolet-visible spectrometry. The refractive index and absorption coefficient of the AIN film were determined by fitting the experimental data and the dispersion relationship of index and wavelength was obtained. The refractive index of the film is 1.87-2.20 in the wavelength range from 250 nm to 1 000 um. The AIN film has an excellent preferred (100) orientation structure, intense absorption in the far ultraviolet ray range of 200- 300nm, and high transmission in the wavelength range of 300-1 000nm. The thickness measured by the UV method is coincident with that measured by the SE method, 427 um and 425 nm respectively.
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