Effect of Pt Addition on the Stress of NiSi Film Formed on Si (100)  

掺Pt对Si(100)上形成的NiSi薄膜应力的影响(英文)

作　　者：黄巍[1] 茹国平[1] Detavernier C Van Meirhaeghe R L 蒋玉龙[1] 屈新萍[1] 李炳宗[1] 

机构地区：[1]复旦大学微电子学系,上海200433 [2]Department of Solid State Sciences,Ghent University,Krijgslaan 281/S1,B-9000 Ghent,Belgium

出　　处：《Journal of Semiconductors》2007年第5期635-639,共5页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60576029,90607018);科技部中国-比利时科技合作项目(批准号:B/06086/01);上海应用材料研究发展基金(批准号:0514);上海市自然科学基金(批准号:05ZR14017)资助项目~~

摘　　要：In order to clarify the effect of pt addition on the stress of NiSi film, in situ stress measurements were taken to evaluate the stress evolution during heating and cooling treatment of Ni1- x Ptx Si alloy films with different Pt concentrations. The room temperature stress, which is mainly thermal stress, was measured to be 775MPa and 1.31GPa for pure NiSi and pure PtSi films grown on Si （100） substrates,respectively. For Ni1-x Ptx Si alloy film, the room temperature stress was observed to increase steadily with Pt concentration. From the temperature dependent stress evolution curves,the stress relaxation temperature was found to increase from 440℃ （for pure NiSi film） to 620℃ （for pure PtSi film） with increasing Pt concentration, thus influencing the residual stress at room temperature.利用在线应力测试技术表征了掺入Pt后对镍硅化物薄膜应力性质的影响.通过改变NiSi薄膜中Pt含量以及控制热处理的升温、降温速率实时测量了薄膜应力,发现在Si(100)衬底上生长的纯NiSi薄膜和纯PtSi薄膜的室温应力主要是热应力,且分别为775 MPa和1·31GPa ,而对于Ni1-xPtxSi合金硅化物薄膜,室温应力则随着Pt含量的增加而逐渐增大.应力随温度变化曲线的分析表明,Ni1-xPtxSi合金硅化物薄膜的应力驰豫温度随Pt含量的增加,从440℃(纯NiSi薄膜)升高到620℃(纯PtSi薄膜) .应力驰豫温度的变化影响了最终室温时的应力值.

关 键 词：NiSi Ni1- x Ptx Si stress 

分 类 号：O482.1[理学—固体物理]