InP同质外延的不稳定生长:小丘的形成(英文)  

Unstable Growth in InP Homoepitaxy:Mound Formation

作　　者：皮彪[1] 孙甲明[1] 林耀望[1] 姚江宏[1] 邢晓东[1] 蔡莹[2] 舒强[1] 贾国治[1] 刘如彬[1] 李丹[1] 王占国[1] 

机构地区：[1]南开大学弱光非线性光子学材料先进技术及制备教育部重点实验室,天津300457 [2]天津师范大学,天津300191

出　　处：《人工晶体学报》2007年第2期263-266,259,共5页Journal of Synthetic Crystals

基　　金：Applied Basic Study Foundation of Tianjin (No.06YFJZJC01100) and the National Natural Science Foundation of China (60476042)

摘　　要：用原子力显微镜研究了在不同的条件下采用固态磷源分子束外延技术生长的InP同质外延薄膜的表面形貌。在样品的表面观察到不稳定三维岛状生长。其主要原因有两种,第一种是生长温度较低时,由于吸附原子受到附加的ES台阶边垒的阻碍作用,使扩散运动不能向台阶下面运动,而在台阶上面形成小丘,第二种是生长温度较高或V/III较低时,因生长中缺磷造成In的堆积而产生。在合适的生长条件下,可获得了光滑的2D层状生长。The mound formation during molecular beam epitaxy of InP with variations of growth temperatures and V/Ⅲ beam equivalent pressure （BEP） ratios is studied by means of atomic force microscopy. Three-dimensional （3D） mounds are observed in two kinds of growth conditions. One is at low growth temperature, the origin of mound formation can be attributed to an intrinsic growth instability of a singular surface in the presence of so-called Ehrlich-Schwoebel （ES） step-edge barrier, which inhibit the downward movement of adatoms at surface step-edges. The other is at high temperature,or at low V/Ⅲ （BEP） ratio, the reason of mound formation is related to phosphorus deficiency. Under suitable growth conditions, two-dimensional （2D） layer-by-layer growth can be obtained.

关 键 词：固态源分子束外延 原子力显微镜 INP 表面形貌 

分 类 号：TN304[电子电信—物理电子学]