ZnSe-ZnS多量子阱中激子动力学及受激发射  

EXCITON DYNAMIC AND STIMULATED EMISSION IN ZnSe ZnS MQWs

作　　者：赵福潭[1,2] 苏锡安[1,2] 王淑梅 陈进军 范希武[1,2] 

机构地区：[1]中国科学院激发态物理开放实验室 [2]贵州省电子产品检测中心

出　　处：《发光学报》1997年第1期23-27,共5页Chinese Journal of Luminescence

基　　金：国家自然科学基金

摘　　要：本文讨论了在ＺｎＳｅ薄膜材料及ＺｎＳｅ－ＺｎＳ多量子阱中宽阱材料和窄阱材料的激子弛豫过程和在窄阱材料中激子受激发射This paper discusses the relaxation processes of exciton in ZnSe thin film and mul tiple quantum wells (MQWs) and the stimulated emission of exciton in narrow well of MQWs. The nonradiative processes of exciton is the leading facter in the ZnSe thin film. The nonradiative relaxation processes were checked in MQWs. The check effectiveness increases with decreasing well width. The stimulated emission have been acquired easily in low dimension material.

关 键 词：量子阱 激子 弛豫过程 受激发射 半导体 

分 类 号：O471.3[理学—半导体物理]