800kV超高压直流可控硅阀的设计和试验  

Design and Testing of Thyristor Valves for 800kV HVDC Projects

作　　者：Norman MacLeod Colin Davidson Mike Woodhouse 

机构地区：[1]AREVA T&D - Power Electronics, UK

出　　处：《华东电力》2007年第C00期27-34,共8页East China Electric Power

摘　　要：可控硅阀有完善的均压电路.因此,按电压比例增加串接级数并不增加各级正常工作电压应力.但是,扩充到800 kV时,为了避免电晕放电和达到经济上的低廉,但又有安全的阀厅空气间隙,必须对电极表面几何形状进行特殊优化.寄生电容上储存的能量随电压的平方增加,这在阀电抗器的设计中对于接通di/dt的控制有重要影响.阀厅的绝缘故障就更为严重,需要特别注意对陡前波电压的控制.变流器阀的大尺寸将影响阀的机械设计,尤其是对地震活跃地区的应用.即使装备很好的实验室,800 kV阀的试验要求仍将是一个挑战.本文考虑了以上问题,并讨论了主要电路的拓扑结构对这些问题的影响.Thyristor valves have robust voltage grading circuits. As a result, increasing the number of series levels in proportion to voltage does not increase the normal working voltage stresses on individual levels. In extending to 800kV, there are, however, a number of issues to be addressed： Special attention is required to the profiling of electrode surfaces, in order to avoid corona discharges and to achieve economically low but secure air clearances in the valve hall. The energy stored in stray capacitance increases as the square of the voltage and this can have important implications on valve reactor design for the control of turn-on di/dt. Insulation faults in the valve hall are more severe and special attention is required to the control of steep-front voltage transients. The large physical size of the converter valves has mechanical design impfications, especially for applications in seismically active areas. The test requirements for valves for 800kV applications will be a challenge for even the best equipped laboratories. The paper considers the above issues and discusses how the choice of main circuit configuration （i.e. one or two 12-pulse converters in series per pole） affects the severity of the problems to be addressed.

关 键 词：800kV 超高压 直流可控硅阀 

分 类 号：TM5[电气工程—电器]