动态离子束混合技术制备氧化铬薄膜的X射线光电子能谱与俄歇电子能谱研究  

XPS and AES analyses of chromium oxide films prepared by ion-beam assisted deposition

作　　者：代海洋[1] 王治安[1] 黄宁康[1] 

机构地区：[1]辐射物理和技术教育部重点实验室四川大学原子核科学技术研究所,成都610064

出　　处：《核技术》2007年第5期419-423,共5页Nuclear Techniques

摘　　要：本文介绍的动态离子束混合技术制备氧化铬薄膜系在不锈钢基体上进行1keV氩离子束溅射沉积铬(同时通入一定量的O),并用100keV的氩离子束或氧离子束轰击该样品。对两种离子束轰击形成的氧化铬薄膜进行了X射线光电子能谱(X-ray photoelectron spectroscopy,XPS)和俄歇电子能谱(Auger electron spectroscopy,AES)的分析研究。发现Ar+离子束制备的氧化铬薄膜主要是Cr2O3化合物,而O+离子束制备的氧化铬薄膜含有其它价态的铬氧化物。Ar+离子束制备氧化铬薄膜的污染碳少于O+离子束制备。与O+离子束制备相比较,相同能量的Ar+离子束轰击更有利于提高沉积的Cr原子与周围O2的反应性;Ar+离子束制备的氧化铬薄膜过渡层的厚1/3左右,较厚的过渡层显示了制备的薄膜具有较好的附着力。Chromium oxide films were prepared at room temperature by ion-beam assisted deposition （IBAD）, in which chromium was deposited by 1 keV Ar^＋ ion sputtering on stainless steel substrates before bombarding the film by 100 keV Ar^＋ or O^＋ beam, while pure oxygen gas was introduced into the vacuum chamber. The film samples were characterized by XPS and AES. The results show that components of the films prepared by Ar^＋ beam bombardment are mainly Cr2O3, whereas the films bombarded by the O^＋ beam consist of oxides of different chromium valences. The films prepared by the Ar^＋ beam bomnbardment have less carbon contamination than those by O^＋ beam. In comparison to the O^＋ ion bombardment, and the reactivity of oxygen molecules with deposited Cr atoms in the films bombarded by the Ar^＋ ions is enhanced, and the film sample bombarded by the Ar^＋ ions has a thicker transition layer （about one-third thicker）, hence an increased adhesion of the film to the substrate.

关 键 词：氧化铬薄膜 动态离子束混合技术 X射线光电子能谱 俄歇电子能谱 

分 类 号：O484.1[理学—固体物理] O484.5[理学—物理]