90nm NMOS器件TDDB击穿特性研究  

Research on TDDB of 90nm NMOS Device

作　　者：周鹏举[1] 马晓华[1] 曹艳荣[1] 郝跃[1] 

机构地区：[1]西安电子科技大学微电子学院,西安710071

出　　处：《半导体技术》2007年第3期217-219,共3页Semiconductor Technology

基　　金：国家自然科学基金(60376024);国家高技术研究发展计划资助项目(2003AA1Z1630)

摘　　要：采用恒定电压应力对90 nm NMOS器件进行了TDDB击穿的评价实验,深入研究了90nm情况下TDDB的击穿机理,并对器件寿命进行预测和分析。结果表明,随着栅厚的不断减薄,E和1/E寿命预测模型不再适用。本文提出了一个器件寿命的修正模型,并按此模型对NMOS器件寿命进行预测,结果和实际值取得了很好的一致。TDDB evaluation experiments were implemented on the 90 nm NMOS devices under constant voltage stress. The breakdown mechanism of TDDB was studied, and the lifetime of the devices was analyzed and predicted. The study reveals that with the decrease of the thickness of gate, the predicted lifetimes of the E and 1/E model are inconsistent with the actual values. A modified lifetime prediction model for 90 nm NMOS devices was presented. The prediction of the lifetime based on the model shows good consistency with the actual values.

关 键 词：经时击穿 器件寿命 E模型 1/E模型 

分 类 号：TN386.1[电子电信—物理电子学]