含Ti-Al阻挡层的硅基Nb掺杂Pb(Zr,Ti)O_3铁电电容器的研究  

Fabrication of Nb-doped Pb(Zr,Ti)O_3 Ferroelectric Capacitors on Si with Ti-Al Barrier

作　　者：刘保亭[1] 马良[2] 边芳[1] 闫小兵[1] 张新[1] 赵庆勋[1] 闫正[1] 

机构地区：[1]河北大学物理科学与技术学院,保定071002 [2]河北大学电信学院,保定071002

出　　处：《真空科学与技术学报》2007年第3期177-180,共4页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金(No.50572021);国家人事部优秀回国人员基金(No.G05-06);国家教育部留学人员科研启动基金(No.2005-546);河北省自然科学基金(No.E2005000130);河北大学基金资助项目(No.B0406030)

摘　　要：应用非晶的Ti-Al薄膜作为导电阻挡层,通过溶胶-凝胶法和磁控溅射法成功地在Si基片上制备了La0.5Sr0.5CoO3/Pb(Nb0.02Zr0.39Ti0.59)O3/La0.5Sr0.5CoO3(LSCO/PNZT/LSCO)电容器异质结,研究了该异质结的铁电性能。当外加电压为5V时,LSCO/PNZT/LSCO铁电电容器的剩余极化强度为-18.0μC/m2,矫顽电压为-0.7 V,该电容器具有较好的保持持性和抗疲劳特性。La0.5Sr0.5CoO3/Pb（Nb0.02Zr0.39Ti0.59）O3/La0.5Sr0.5CoO 3（LSCO/PNZT/LSCO） ferroelectric capacitor heterostructure is fabricated on Si substrate with amorphous Ti-Al film as the diffusion barrier layer,in which both LSCO and Ti-Al films are grown by magnetron sputtering, and PNZT is prepared by sol-gel. We found that the LSCO/PNZT/LSCO capacitor,measured at 5 V, possesses very good ferroelectric properties, such as small coercive voltage（ -0.7 V）, high remnant polarization（ - 18.0 μC/cm^2）, good fatigue-free and retention characteristics.

关 键 词：阻挡层 铁电存储器 异质结 LSCO/PNZT/LSCO TI-AL 

分 类 号：O484.1[理学—固体物理]