光电负阻晶体管的初步研究  

The Preliminary Study of Photo Negative Resistance Transistor

作　　者：郭维廉[1] 李树荣[1] 郑云光[1] 

机构地区：[1]天津大学电子工程系

出　　处：《电子学报》1997年第2期100-102,共3页Acta Electronica Sinica

基　　金：自然科学基金

摘　　要：本文对“λ”双极晶体管（ＬＢＴ）型光电负阻晶体管（或称为光电“λ”双极晶管体ＰＬＢＴ）［１］，首次给出了完整的等效电路。并以此等效电路为基础，用ＰＳＰＩＣＥ电路模拟程序，对ＰＬＢＴ的Ｉｐｈ—ＶｃＥ特性进行了模拟．模拟结果与从ＰＬＢＴ实验性器件实测的Ｉｐｈ－ＶｃＥ特性吻合得很好．初步研究还表明，此器件除了作为光探测器外，还具有光生振荡和光控调频等功能．In this paper,a complete equivalent circuit of the photo negative resistance transistor with LBT structure(or photo lambda bipolar transistor PLBT)has been proposed for the first time.Based on this equivalent circuit,and by using the PSPICE circuit simulation program,the simulation on IPh-VcE characteristic of PLBT has been made. The simulation result is in good agreement with that measured from the PLBT experimental device. From initial investigation, it isshown that besides as a photodetector,this device has also the functions of photo-induced oscillation and photo-controlled frequency modulation.

关 键 词：光电器件 负阻器件 

分 类 号：TN15[电子电信—物理电子学]