镍增进无定形硅低温固相外延生长  

Low temperature solid phase epitaxial regrowth of amorphous silicon enhanced by Ni implantation

作　　者：曹德新[1] 朱德彰[1] 朱福英[1] 曹建清[1] 

机构地区：[1]中国科学院上海原子核研究所

出　　处：《核技术》1997年第2期79-82,共4页Nuclear Techniques

基　　金：国家自然科学基金

摘　　要：离子注入形成的无定形硅在可形成硅化物杂质镍作用下，促使无定形层硅在低温（４３０℃）时发生了固相外延生长。注入杂质镍浓度为１×１０１２－２．５×１０１７Ｎｉ／ｃｍ２。卢瑟福背散射和沟道（ＲＢＳ－Ｃ）测量表明，６个量级剂量注入并经４３０℃退火后的样品都发生了不同程度的固相外延生长，且比通常固相外延生长约加快了二个数量级，其外延生长速度与镍浓度相关。Solid phase epitaxial regrowth of amorphous silicon formed at 430℃was found if the amorphous silicon layer involved implanted Ni impurity with dose range from 1×10 12 ; to 2.5×10 17 Ni/cm 2. The Rutherford backscattering with channeling was used to determine the thickness of amorphous Si layer after 430℃ annealing. The results indicate that the SPER at 430℃ occurs and its rate depends on Ni implanted dose, and normally, the SPER is faster than that of pure amorphous Si by two orders.

关 键 词：固相外延生长 镍注入 无定形层 半导体 

分 类 号：TN304.054[电子电信—物理电子学]