飞秒激光沉积β-FeSi_2／Si半导体膜及光学性能研究  

β-FeSi_2 Thin Film Prepared by Femtosecond Laser Ablation and Its Optical Characteristic

作　　者：周幼华[1] 陆培祥[1] 杨光[1] 杨义发[1] 郑启光[1] 

机构地区：[1]华中科技大学 激光技术国家重点实验室

出　　处：《无机材料学报》2007年第3期545-549,共5页Journal of Inorganic Materials

基　　金：博士点基金(20040487006);武汉市青年晨光计划(20035002016-15)

摘　　要：采用飞秒脉冲激光沉积法在Si(100)和Si(111)单晶基片上制备了均匀的单相β-FeSi2薄膜;用X射线衍射(XRD),场扫描电镜(FESEM),能谱仪(EDX),傅立叶红外拉曼谱仪(FTRIS)研究了薄膜的结构、组分、表面形貌和光学性能．观察到了β-FeSi2在Si单晶基片上的生长与晶面取向有关的证据,并在室温(20℃)下观测到β-FeSi2薄膜的光致发光,其发光波长为1．53μm;在氩离子514nm激光的激发下,在192．0和243．9cm-1等位置观察到β-FeSi2的拉曼散射峰．The even single phase β-FeSi2 thin films were prepared by femtosecond laser deposition on Si （100） and Si （111） wafers using a FeSi2 alloy target. X-ray diffraction, field scanning electron microscope （FSEM）, energy dispersive X-ray microanalysis （EDX）, Fourier-transform Raman infrared spectroscope （FTRIS） were used to characterize the structure, composition, and properties of β-FeSi2 films. The growth of β-FeSi2 depends on the orientation of Si substrates. The photoluminescence from the grown single phase β-FeSi2 thin film observed at room temperature （20℃） is at a wavelength of 1.53 μm. Raman peaks of β-FeSi2 observed by an Raman microscope with 514.5nm argon laser are at 192.9cm^- 1,243.9cm^-1 and other positions.

关 键 词：Β-FESI2 飞秒 脉冲激光沉积法(PLD) 光致发光 

分 类 号：O484[理学—固体物理]