红外InGaAs/InP单光子探测器暗计数的研究  

Dark Count Probability for InGaAs/InP Single-photon Detector at Infrared Wavelengths

作　　者：李水峰[1] 熊予莹[1] 李日豪[2] 廖常俊[2] 

机构地区：[1]华南师范大学物理与电信工程学院,广东广州510631 [2]华南师范大学信息光电子科技学院,广东广州510631

出　　处：《量子光学学报》2007年第2期141-145,共5页Journal of Quantum Optics

基　　金：国家973技术资助项目(G2001039302);广东省科技专项(2003A103405);广州市科技攻关资助项目(2001-Z-095-01)

摘　　要：在开发探测器灵敏度极限实现单光子探测时,暗计数是影响探测效率的主要原因。本文分析了在红外波段采用InGaAs/InP雪崩光电二极管工作于雪崩击穿电压之上(盖革模式),进行单光子探测时暗计数的三个主要来源,指出隧穿效应对暗计数的贡献是很小的,并且针对热噪声和后脉冲分析了减小暗计数的有效方法。Three major for single photon detect photon detection efficie that the tunneling effec after-pulses can be effe sources of Dark ion are analyzed ncy can be t has no c ctively con counts in InGaAs/InP avalanche to show the raised. Both the ontribution to the trolled by Peltier way in analysis which the d photodiode operated in Geiger ark counts can be decreased an and the measured I-V characteristic curves mode d the show dark counts. The dark counts from thermal carriers and and gated mode operation

关 键 词：雪崩光电二极管 暗计数 后脉冲 盖革模式 

分 类 号：O431[机械工程—光学工程]