溅射功率对CIAS电池吸收层前驱膜成分和结构的影响  

EFFECTS OF SPUTTERING POWER ON COMPOSITION AND MICROSTRUCTURES OF PRECURSOR FILMS FOR ABSORBER OF CIAS SOLAR CELL

作　　者：向华[1] 庄大明[1] 张弓[1] 李春雷[1] 

机构地区：[1]清华大学机械工程系功能薄膜研究室,北京100084

出　　处：《太阳能学报》2007年第5期499-503,共5页Acta Energiae Solaris Sinica

摘　　要：采用中频交流磁控溅射方法制备了CuIn、CuAl和CIA合金膜。并用SEM及XRD观察和分析了各种薄膜的表面形貌、成分和组织结构,着重分析了靶功率密度对薄膜成分、晶体结构的影响。结果表明,通过调节靶功率密度,能精确控制薄膜中CuI、n、Al比例。制备得到了Cu/(In+Al)原子比接近1,且Al/(In+Al)比例可调的成分分布均匀的CIA薄膜。CIA前驱膜是以CuIn和In为基础相,Al原子主要是以替代In原子的固溶体形式存在。当溅射CuIn合金靶和CuAl复合靶的功率密度分别为0.20和0.15 W/cm2时,可制备得到由Cu11In9和CuIn两相组成的理想的CIA前驱膜。Culn, CuAl and CulnAl （CIA） precursor films were prepared using middle frequency magnetron sputtering. SEM and XRD were used to observe and analyze the surface morphologies, compositions, and microstructures of the various films. The effects of sputtering power on compositions and microstructures of films were analyzed intersively. The results showed that the atomic ratios of Cu, In and Al in the films can be controlled accurately by adjusting the sputtering power. The CIA precursor films with a Cu/（In ＋ M） atomic ratio of approaching 1 and an adjustable Al/（In ＋ Al） ratio and with uniform distribution of all alloys were obtained. CIA precursor film is composed of Culn phase and In phrase. A1 exists mainly in solid solution by substituting In. Ideal CIA precursor film consists of both Cun In9 and Culn phases which were obtained under the sputtering power of 0.20 and 0.15 W/cm^2 for CuIn and CuAl targets, respectively.

关 键 词：CIAS 太阳电池 磁控溅射 前驱膜 

分 类 号：TM615[电气工程—电力系统及自动化]