金刚石镶嵌非晶碳膜和类金刚石薄膜的场致电子发射研究  

The studies on Field Electron Emission From CVD diamond-carbon Thin Films and Diamond-like Films

作　　者：姚宁[1] 李运钧[1] 何金田[1] 王世明[1] 张兵临[1] 任风轩 

机构地区：[1]郑州大学物理工程学院 [2]河南省对外经济贸易职工大学,郑州450002

出　　处：《光电子技术》1997年第1期24-27,共4页Optoelectronic Technology

基　　金：国家863计划资助

摘　　要：报道了在钼衬底上利用微波等离子体化学气相淀积技术制备金刚石镶嵌非晶碳膜，在硅衬底上用脉冲激光淀积技术（pulsedLaserDeposition）制备类金刚石薄膜，并对其场发射特性和机理进行了进一步的研究。用金刚石镶嵌非晶碳膜作阴极，在2．1V／μm的场强下便有电子发射，最大发射电流密度为4mA／cm2。实验表明，金刚石镶嵌非晶碳膜是制做场效发射冷阴极的合适材料。：Diamond-carbon thin films deposited on molybdenum substrates were prepared using microwave plasma-enhanced chemical vapor deposition (MPCVD). The diamond-like films were prepared by pulsed laser deposition (PLD). A current density from diamond-carbon films was 4 mA/cm' and turn-on field of 2. l V/pm was obtained. The diamond-carbon films will be good for cold electron field emitters.

关 键 词：金刚石 类金刚石薄膜 场致电子发射 

分 类 号：TN304.18[电子电信—物理电子学]