Surface Polishing of 6H-SiC Substrates  

作　　者：Xiufang CHEN Xiangang XU Juan LI Shouzhen JIANG Lina NING Yingmin WANG Deying MA Xiaobo HU Minhua JIANG 

机构地区：[1]State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

出　　处：《Journal of Materials Science & Technology》2007年第3期430-432,共3页材料科学技术（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No.60025409 and No.50472068);supported by the National High-Tech Research and Development Program of China(863 Program,Grant No.2001AA311080).

摘　　要：The surface polishing for silicon carbide （SIC） substrates was investigated and results were presented for mechanical polishing （MP） and chemo-mechanical polishing （CMP）. High quality surfaces were obtained after CMP with colloidal silica. The removal mechanism of scratches in MP and detailed physical and chemical process during CMP were analyzed. The effects of MP and CMP on the surface roughness were assessed by optical microscopy （OM）, atomic force microscopy （AFM） and step profilometry. KOH etching and high resolution X-ray diffractometry （H RXRD） were applied to evaluate the subsurface damage of 6H-SiC substrates.The surface polishing for silicon carbide （SIC） substrates was investigated and results were presented for mechanical polishing （MP） and chemo-mechanical polishing （CMP）. High quality surfaces were obtained after CMP with colloidal silica. The removal mechanism of scratches in MP and detailed physical and chemical process during CMP were analyzed. The effects of MP and CMP on the surface roughness were assessed by optical microscopy （OM）, atomic force microscopy （AFM） and step profilometry. KOH etching and high resolution X-ray diffractometry （H RXRD） were applied to evaluate the subsurface damage of 6H-SiC substrates.

关 键 词：SIC Chemo-mechanical polishing （CMP） ROUGHNESS Subsurface damage 

分 类 号：TN305.2[电子电信—物理电子学]