滑板中原位生成SiC晶须的制备机理  

Growth Mechanism of In-situ SiC Whisker in Slide Gate

作　　者：白晨[1] 黄志明[1] 邓承继[1] 

机构地区：[1]武汉科技大学湖北省耐火材料与高温陶瓷国家重点实验室培育基地,湖北武汉430081

出　　处：《中国材料科技与设备》2007年第3期35-37,41,共4页Chinese Materials Science Technology & Equipment

基　　金：湖北省自然基金资助项目（2006ABA287）

摘　　要：本文以滑板为研究对象，采用硅微粉和碳黑为原料，其混合物在氩气气氛下，于1400-1650℃范围内进行热处理。结果表明：这个系统生成的SiC晶须在低温阶段是为气-固反应为模型，生长的SiC晶须呈直杆状和哑铃状。随着热处理温度升高，SiC晶须生长机理由气-固模型转变为气-液-固模型。SiC whisker in-situ synthesized in the slide gate was synthesized by Carbothemal reduction of SlOe powder treated in Ar atmosphere at 1400-1650℃, respectively. Its microstructure and reaction mechanism were investigated. It shows that Vapor-Solid grown mechanism of SiC whisker dominates at low treating temperature, and SiC whisker is dumbbell-like besides straight. Vapor-Luquid-Solid grown mechanism appears at high treating temperature due to the existence of Fe impurity and a lot of SiC whisker looks like pins.

关 键 词：SIC 晶须 机理 原位生成 滑板 

分 类 号：TQ175.75[化学工程—硅酸盐工业]