掺硼a-Si:H薄膜脉冲快速光热退火(PRPTA)的研究  

Investigation on pulsed rapid photo thermal annealing of B-doped a-Si:H films

作　　者：汪昌州[1] 杨仕娥[1] 赵尚丽[1] 文书堂[1] 卢景霄[1] 

机构地区：[1]郑州大学物理工程学院教育部材料物理重点实验室,河南郑州450052

出　　处：《真空》2007年第3期28-31,共4页Vacuum

基　　金：河南省科技攻关项目(0424210016)

摘　　要：采用射频等离子体增强化学气相沉积(RF-PECVD)法制备掺硼非晶硅(a-Si:H)薄膜,然后用脉冲快速光热退火(PRPTA)法对其进行固相晶化。研究结果表明:掺硼a-Si:H薄膜在550℃恒温条件下退火3h后,其结晶状况无明显变化;而通过加高温热脉冲可以在玻璃衬底上获得晶化较好的P型多晶硅薄膜。另外,非晶硅薄膜的掺硼浓度及脉冲条件对脉冲快速光热退火的效果有一定影响。Boron-doped hydrogenated amorphous silicon （a-Si ： H） thin films were prepared using radio-frequency plasmaenhanced chemical vapor deposition （RF-PECVD） process. The solid-phase films were then crystallized by PRPTA （pulsed rapid photo thermal annealing）. By Raman spectrometer, SEM and conductivity measurements, the investigation results showed that no obvious change is found in the crystallization of Boron-doped a-Si ： H thin films after annealed at the constant temperature 550C for 3hr, and a highly crystalline volume fraction of p-type polycrystalline silicon films can be deposited on glass substrates by way of high-temperature pulse. In addition, the doping percentage and condition of pulses have a certain effect on annealing effect.

关 键 词：掺硼非晶硅薄膜 脉冲快速光热退火 固相晶化 

分 类 号：O484[理学—固体物理]