1.3GHz 0.25μm CMOS低噪声放大器的设计  

Design of 1.3GHz 0.25μm CMOS Low Noise Amplifier

作　　者：马红波[1] 冯全源[1] 

机构地区：[1]西南交通大学微电子研究所,四川成都610031

出　　处：《微电子学与计算机》2007年第5期13-15,18,共4页Microelectronics & Computer

基　　金：国家自然科学基金项目(60371017)

摘　　要：设计了一种基于0.25μmCMOS工艺的共源共栅型1.3GHz的LNA。从噪声优化、增益及阻抗匹配角度详细分析了电路的设计方法,讨论了寄生电容Cgd、C_match_in及共栅管沟道宽度W2对LNA性能的影响。采用ADS软件,对W2进行扫描和对LNAS参量和噪声系数进行仿真测试结果表明:该LNA在1.3GHz的工作频率下,具有良好的性能指标,噪声系数fN为1.42dB,增益S21为13.687dB,匹配参数S11为-14.769dB,S22为-14.530dB,反向隔离度S12为-52.955dB。A 1.3GHz cascode low noise amplifier based on 0.25μm CMOS technology has been successfully designed in this paper. From the aspect of noise optimization, gain and impedance match, the design methodology for LNA is analyzed in detail, the influence of capacitance Cgd, C_match_in and W2 on LNA is also discussed, Whose noise factor and S- parameter is simulated and tested by the ADS software. The result has argued that the good fN of 1.42dB, moderate gain of 13.687dB, acceptable Sn of -14.769dB, S,, of -14.530dB , S12 of -52.955dB are achieved under the frequency of 1.3GHz.

关 键 词：共源共栅 低噪声放大器 噪声系数 阻抗匹配 

分 类 号：TN722.7[电子电信—电路与系统]