氮离子轰击改善胶体石墨薄膜平面场发射特性的研究  

Improving the Field Emission Properties of a Graphite Paste Film by Nitrogen Ion Bombardment

作　　者：王玮玮[1] 孙辉[1] 于利刚[1] 张耿民[1] 

机构地区：[1]北京大学信息科学技术学院电子学系,北京100871

出　　处：《北京大学学报（自然科学版）》2007年第3期412-416,共5页Acta Scientiarum Naturalium Universitatis Pekinensis

基　　金：国家自然科学基金(60471008和60231010)资助项目

摘　　要：研究了氮离子（N^＋）轰击对石墨薄膜场发射特性的影响。片层石墨被N^＋轰击成较整齐排列的锥尖阵列,尖端密度-10^8cm^-2。XPS谱证实有许多N原子注入薄膜,膜内存在大量sp2杂化轨道键。场发射测试表明,经过N＋轰击,整个薄膜在场发射的均匀一致性方面有较明显的改善,场发射电流密度从0.3增大到1.65 mA/cm^2。The field emission properties of a graphite paste film were found to have been greatly improved by nitrogen ion bombardment. The bombardment transformed the graphite surface into an array of graphite cones with a - 10^8 cm^-2 tip density. XPS measurement showed that plenty of nitrogen had been injected into the graphite film and there existed a large number of sp2 bonds. Field emission test demonstrated that the distribution of the emission sites in the post-bombardment film was much more dense and uniform than that of the original one. The maximum current density of 1.65 mA/cm^2 was also achieved, which was much higher than that of the pre-treatment sample.

关 键 词：氮离子(N^+) 溅射轰击 石墨 场发射阵列 

分 类 号：TM242[一般工业技术—材料科学与工程]