AlN薄膜的离子反应镀工艺优化及分析  

Technology Optimization of Reactive Ion Plating for AlN Film and Its Analysis

作　　者：刘思用[1] 林立[1] 杨武保[1] 孙惠峰[1] 

机构地区：[1]中国石油大学(北京)机电工程学院材料系,北京102249

出　　处：《表面技术》2007年第3期37-39,共3页Surface Technology

摘　　要：利用高纯氮气和铝,采用离子反应镀的方法,在石英玻璃衬底上成功制得AlN薄膜。正交设计优化结果表明:AlN薄膜最大沉积速率达到0.81μm/min,其相应的工艺参数为:蒸发电压225V,轰击电压70V,轰击时N2气压为1.5999Pa。X-射线衍射、原子力显微镜、近红外光谱、拉曼光谱对薄膜进行了分析,证明了AlN薄膜的存在。AlN film was produced on glass with high-pure N2 and Al by reactive ion plating. The result of orthogonal design indicates that the largest deposited speed is about 0.81 μm/min, its technology parameters are like this ： the evaporating voltage is 225V, the bombarding voltage is 70V, the vacuum degree is 1.2 × 10^-2torr. The film was analyzed by XRD, AFM, near infrared spectrum, and Raman spectrum, which ensured the AlN film＇s presence.

关 键 词：氮化铝 薄膜 离子反应镀 工艺优化 

分 类 号：TG174.44[金属学及工艺—金属表面处理]