铅/钡摩尔比对铅酸钡陶瓷薄膜电阻率的影响(英文)  

INFLUENCE OF MOLAR RATIO OF LEAD TO BARIUM ON ELECTRICAL RESISTIVITY OF BARIUM PLUMBATE THIN FILMS

作　　者：陆裕东[1] 王歆[1] 庄志强[1] 

机构地区：[1]华南理工大学材料学院特种功能材料教育部重点实验室

出　　处：《硅酸盐学报》2007年第6期696-700,共5页Journal of The Chinese Ceramic Society

基　　金：广东省自然科学基金(033177)资助项目

摘　　要：铅酸钡(BaPbO3)导电薄膜是目前最有潜力的锆钛酸铅(lead zirconate titanate,PZT)铁电器件底电极替代材料之一。用溶胶-凝胶法在氧化铝(Al2O3)基片上旋涂成型BaPbO3薄膜。由于氧化铅(PbO)的高温挥发性,因此有必要研究薄膜中的铅/钡摩尔比与薄膜电阻率之间的关系。实验比较了常规热处理(conventional thermal annealing,CTA)和快速热处理(rapid thermal annealing,RTA)方式,用X射线衍射和能量散射X射线能谱研究了热处理方式和热处理制度对薄膜方阻的影响,分别得到了CTA和RTA热处理条件下BaPbO3薄膜的最低方阻性能,与CTA热处理相比,RTA热处理技术需要更高的热处理温度,因此,CTA热处理技术更为适合BaPbO3薄膜的合成。Barium plumbate （BaPbO3） thin films are one of the most promising perovskite materials for the bottom electrode of lead zirconate titanate （PZT） devices. The BaPbO3 thin films were deposited on aluminum oxide （Al2O3） substrates using the sol-gel method under spin-coating. The high volatility characteristic of lead oxide （PbO） results in nonstoichiometry, so there is a need to investigate the influence of the molar ratio of lead （Pb） to barium （Ba） on the electrical resistivity of BaPbO3 thin films. The contrast between the conventional thermal annealing （CTA） and rapid thermal annealing （RTA） techniques is discussed here. The influence of annealing technique and heat treatment procedure on electrical resistivity was investigated by X-ray diffraction and energy dispersive X-ray spectroscopy. Correlations were established between the molar ratio of Pb to Ba and sheet resistance, and the lowest sheet resistance was obtained using the CTA and RTA techniques respectively. In contrast with CTA, the RTA technique needs a higher annealing temperature to synthesize BaPbO3 phase, and the CTA technique is more appropriate for the synthesis of BaPbO3 films.

关 键 词：铅酸钡 薄膜 溶胶-凝胶 旋涂 热处理 薄膜方阻 

分 类 号：TN304.1[电子电信—物理电子学]